BC807/BC808 is a PNP epitaxial silicon transistor suitable for AF driver stages and low power output stages. Its features include: collector-emitter voltage ranging from -45V to -25V, emitter-base voltage of -5V, maximum collector current of -800mA, maximum collector power dissipation of 310mW, etc.
This document provides technical specifications, electrical characteristics, and classification data for the Fairchild Semiconductor BC807 and BC808 series of PNP epitaxial silicon transistors. These devices are designed specifically for switching and amplifier applications, such as AF-driver stages and low power output stages.
| Collector-Emitter Voltage (BC807) | -50 V |
|---|---|
| Collector-Emitter Voltage (BC808) | -30 V |
| Emitter-Base Voltage | 5 v |
| Collector Current (DC) | -800 mA |
| Collector Power Dissipation | -310 mW |
| Junction Temperature | 150 °C |
These transistors are suitable for switching and amplifier applications, including AF-driver stages and low power output stages.
The maximum collector current (DC) for both the BC807 and BC808 is -800 mA.