Motorola MJW16212 Bipolar Power Transistor Datasheet

MJW16212 is a state-of-the-art SWITCHMODE bipolar power transistor. It has 1500 V collector-emitter breakdown capability, typical dynamic desaturation specified (new turn-off characteristic), application-specific state-of-the-art die design, fast switching (200 ns inductive fall time and 2000 ns inductive storage time), low saturation voltage (0.15 V at 5.5 A collector current and 2.5 A base drive), low collector-emitter leakage current (250 µA max at 1500 V VCES), high emitter-base breakdown capability (8.0 V min, for high voltage off drive circuits)


Motorola MJW16212 Bipolar Power Transistor Datasheet - cover page
Brand
Motorola
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
292 KB
Published
10 July, 2012
Updated
30 September, 2023
MD5 checksum
88BCC37B5E499175FCD85658564DA4F0

About this manual

The Motorola MJW16212 is a state-of-the-art SWITCHMODE bipolar power transistor specifically designed for use in horizontal deflection circuits. It targets 20 mm diameter neck, high and very high resolution, full page, monochrome monitors.

Key features include a 1500 Volt Collector-Emitter Breakdown Capability, typical dynamic desaturation specification, fast switching with 200 ns Inductive Fall Time, low saturation voltage of 0.15 Volts at 5.5 Amps, and high Emitter-Base breakdown capability for off-drive circuits.

What's inside

  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Switching Characteristics
  • Safe Operating Area

Specifications

Collector-Emitter Breakdown Voltage (Vces)1500 Vdc
Operating and Storage Temperature Range-55 to 125 °C

Frequently asked questions

What is the typical inductive fall time?

The typical inductive fall time is 200 ns.

What is the maximum collector-emitter leakage current at 1500 Volts?

The maximum collector-emitter leakage current is 250 µA.

What is the minimum Emitter-Base breakdown voltage?

The device has a high emitter-base breakdown capability of 8.0 Volts (Min).

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