The MJW21195/D is an Onsemi preferred device that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. The MJW21195/D features total harmonic distortion characterization, high dc current gain - hFE=20 Min@IC=8 Adc, excellent gain linearity, and high SOA: 2.25 A, 80 V, 1 second.
The document describes the MJW21195 (PNP) and MJW21196 (NPN) silicon power transistors, which utilize Perforated Emitter technology. These preferred devices are specifically designed for high power audio output, disk head positioners, and linear applications, featuring characterized Total Harmonic Distortion and high DC current gain.
| Collector-Emitter Voltage | 250 Vdc |
|---|---|
| Collector-Base Voltage | 400 Vdc |
| Collector Current (Continuous) | 16 Adc |
| Total Power Dissipation | 200 Watts |
| Thermal Resistance Junction to Case | 0.7 °C/W |
| Package Style | TO-247 |
They are designed for high power audio output, disk head positioners, and linear applications.
The minimum DC current gain is 20 at a collector current of 8 Adc.
The peak collector current for a pulse test is 30 Adc.