These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. • Switching Regulators • Fast Turn-Off Times – TC = 100°C • Inverters 50 ns Inductive Fall Time (Typ) • Solenoids 90 ns Inductive Crossover Time (Typ) • Relay Drivers 800 ns Inductive Storage Time (Typ) • Motor Controls • 100�C Performance Specified for: • Deflection Circuits Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents
This document is a Designer's Data Sheet for the Motorola SWITCHMODE Series of NPN silicon power transistors. The series includes models MJ16010, MJW16010, MJ16012, and MJW16012, which are optimized for high-voltage and high-speed power switching applications where fall time is critical.
These devices are particularly suited for line-operated switchmode applications such as motor controls, deflection circuits, switching regulators, inverters, solenoids, and relay drivers. The MJ16012 and MJW16012 variants offer selected high gain for use in applications where drive current is limited.
| Collector-Emitter Voltage (VCEO) | 450 Vdc |
|---|---|
| Collector Current — Continuous (Io) | 15 Adc |
| Total Device Dissipation @ Tc = 25°C | 175 Watts (MJ16010) |
| Operating and Storage Junction Temperature Range | -55 to 200 °C |
| Thermal Resistance, Junction to Case (RθJC) | 1.0 °C/W |
The maximum continuous collector current is 15 Adc.
The maximum collector-emitter voltage is 850 Vdc.
The maximum total device dissipation is 175 Watts.