The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. They are characterized by low harmonic distortion, high DC current gain, excellent gain linearity, and high SOA capabilities.
This document provides technical specifications for the MJW21193 (PNP) and MJW21194 (NPN) complementary silicon power transistors. These devices utilize Perforated Emitter technology and are designed for high power audio output, disk head positioners, and linear applications.
Key electrical characteristics include a collector-emitter voltage rating of 250 Vdc, a continuous collector current of 16 Adc, and a total power dissipation of 200 Watts at a case temperature of 25°C. The transistors are housed in TO-247 packages.
| Collector-Emitter Voltage (VCEO) | 250 Vdc |
|---|---|
| Collector-Base Voltage (VCBO) | 400 Vdc |
| Emitter-Base Voltage (VEBO) | 5.0 Vdc |
| Collector Current - Continuous | 16 Adc |
| Total Power Dissipation (Tc = 25°C) | 200 Watts |
| Thermal Resistance, Junction to Case (RθJC) | 0.7 °C/W |
| Package Type | TO-247 |
They are specifically designed for high power audio output, disk head positioners and linear applications.
The maximum continuous collector current (Io) is 16 Adc.