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This document is the data sheet of BC817-16LT1. It mainly introduces the maximum rating, thermal characteristics, electrical characteristics and other information of the product.

BC817-16 is a NPN small signal transistor from MCC, with a maximum collector-emitter voltage of 45V, 5V emitter-base voltage, 800mA collector current, 1000mA peak collector current, 1000mA peak emitter current and 310mW power dissipation.

This document describes the specifications and characteristics of NPN silicon planar medium power transistors in SOT23 package. The transistors are available in various models such as BC81716, BC81725, and BC81740, which are complementary to the BC807 series. They have high maximum operating temperature and current carrying capacity, making them suitable for various circuit applications.

BC 817 / BC 818 is a general purpose transistor produced by Siemens. Its collector current is 800 mA and the emitter current is 200 mA. The feature is low power consumption. The power loss is 310 mW and the package type is SOT-23 plastic housing.

BC807W, BC808W are Infineon PNP silicon AF transistors, used for general AF applications, with high collector current, high current gain, low collector-emitter saturation voltage.

BC807U is a PNP Silicon Transistor Array for AF input stages and driver applications with high current gain, low collector-emitter saturation voltage and two (galvanic) internal isolated Transistors with good matching in one package

KST-2085-000 1 BC807F is a PNP silicon transistor suitable for high current and switching applications. It is suitable for AF driver stages and low power output stages, and is complementary to BC817F.

This document describes the features and characteristics of BC807DS, including high current, total power dissipation, and replacement for two SOT23 packaged transistors.

This data sheet provides information on maximum ratings, thermal characteristics, device marking, electrical characteristics, etc. for the BC807-16LT1.

This document describes the features and characteristics of the BC 807W / BC 808W general purpose PNP surface mount transistors, including installation method, electrical parameters, dimensions, packaging form, etc.

BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR is an ideally suited for automatic insertion PNP surface mount transistor with epitaxial planar die construction, for switching, AF driver and amplifier applications. The transistor has complementary NPN types available (BC817), is lead free/RoHS compliant and qualified to AEC-Q101 standards for high reliability.

BC807-16/-25/-40 is a PNP surface mount transistor ideally suited for automatic insertion, switching, AF driver, and amplifier applications. It features ideal insertion characteristics and construction with epitaxial planar die. BC807-16/-25/-40 comes in three variants: BC807-16, BC807-25, and BC807-40.

This document describes the features and characteristics of SOT23 PNP silicon planar medium power transistors, including their part marking details, absolute maximum ratings, and electrical characteristics.

BC807, BC808 are PNP Silicon AF Transistors, which have high collector current, high current gain and low collector-emitter saturation voltage.