This datasheet provides parameters of 1kV SWITCHMODE series bipolar power transistors, including reverse-biased SOA, switching times with inductive loads, saturation voltages, leakage currents, etc.
The document is a Designer's Data Sheet for the Motorola MJW16010A*, an NPN Silicon Power Transistor in the SWITCHMODE Series. These devices are rated at 15 Amperes and feature a Collector-Emitter Voltage of up to 1 kV (with VCEO at 500 Vdc). They are specifically designed for high-voltage, high-speed power switching in inductive circuits where fall time is critical.
| Collector-Emitter Voltage (VCEO) | 500 Vdc |
|---|---|
| Collector-Emitter Sustaining Voltage (VCEV) | 1000 Vdc |
| Emitter-Base Voltage (VEB) | 6 Vdc |
| Collector Current (Continuous) | 15 Adc |
| Total Power Dissipation (@Tc=25°C) | 135 Watts |
They are suited for Switching Regulators, Inverters, Solenoids, Relay Drivers, Motor Controls, and Deflection Circuits.
The specified Operating and Storage Junction Temperature Range (TJ) is -55 to 150°C.
The maximum Thermal Resistance, Junction to Case (RθJC) is 0.92 °C/W.