The MJW18020 is a planar high voltage power transistor specifically designed for motor control applications, high power supplies, and UPS's. Its high reproducibility of DC and switching parameters minimizes dead time in bridge configurations. Key features include: high and excellent gain linearity, fast and very tight switching times (parameters tsi and tfi), very stable leakage current due to the planar structure, high reliability.
This document is a datasheet for the MJW18020, a planar NPN silicon power transistor designed for motor control applications, high power supplies, and UPS systems. Key features include high and excellent gain linearity, fast switching times, and a very stable leakage current due to its planar structure.
The datasheet provides maximum ratings for the TO-247 package, including a collector-emitter sustaining voltage of 450V and a continuous collector current of 30A. It also lists detailed electrical characteristics such as DC current gain, saturation voltages, and dynamic switching times for both resistive and inductive loads.
| Collector-Emitter Sustaining Voltage | 450 V |
|---|---|
| Collector-Base Breakdown Voltage | 1000 V |
| Continuous Collector Current | 30 A |
| Total Power Dissipation | 250 Watts |
| Thermal Resistance Junction-to-Case | 0.5 °C/W |
The maximum continuous collector current is 30 Amperes.
The typical DC current gain is 14 when Ig is 3 Adc and Voge is 5 Vdc.