FCA35N60 600V N-Channel MOSFET is a new generation of high voltage MOSFET family developed by Fairchild Corporation. It has a maximum breakdown voltage of 650V, a low on-resistance of 0.079Ω and a low output capacitance of 340pF.
This document is a technical datasheet for the Fairchild Semiconductor FCA35N60, an N-channel MOSFET utilizing proprietary SuperFET technology. The device is designed for high-voltage applications up to 650V at 150°C and features low on-resistance and gate charge for efficient power conversion.
| Drain to Source Voltage (Max) | 600 V |
|---|---|
| Continuous Drain Current (25°C) | 35 A |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-3PN |
The component operates and stores within a range of -55 to +150 °C.
The maximum rated voltage between the drain and source is 600 V.