FDB2552 / FDP2552 is a N-Channel PowerTrench® MOSFET with 150V, 37A and 36mΩ features. It features low Miller charge, low QRR body diode and UIS capability (single pulse and repetitive pulse).
This document is a technical datasheet for the Fairchild Semiconductor FDB2552 and FDP2552 series of N-Channel PowerTrench MOSFETs. The devices are rated at 150V drain-to-source voltage, 37A continuous current, and feature an on-resistance (Rds(on)) of 36mΩ typical.
| Drain to Source Voltage (Vdss) | 150 V |
|---|---|
| Continuous Drain Current (Tj=25°C) | 37 A |
| On-Resistance (Typical) | 36 mΩ |
| Total Gate Charge (Typical) | 39 nC |
| Operating Temperature Range | -55 to 175 °C |
The device is suitable for DC/DC converters, off-line UPS systems, distributed power architectures, and high voltage synchronous rectifiers.
Yes, the device features UIS (Unclamped Inductive Switching) capability for both single pulse and repetitive pulses.
The maximum rated power dissipation is 150 W at a junction temperature of 25°C.