FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ is a low-resistance power MOSFET produced by Fairchild Semiconductor Corporation. It has low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse) and other features.
This document is a datasheet for the Fairchild Semiconductor FDB2532, FDP2532, and FDI2532 series of N-Channel PowerTrench MOSFETs. The devices are rated for 150V drain-to-source voltage and feature a typical on-resistance of 14mΩ at 10V gate drive. They are designed for applications including DC/DC converters, off-line UPS systems, and automotive load control.
| Drain to Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 79 A |
| Typical On-Resistance | 14mΩ |
| Total Gate Charge | 82nC |
| Operating Temperature Range | -55 to 175°C |
| Thermal Resistance Junction to Case (TO-220) | 0.48°C/W |
They are suitable for DC/DC converters, off-line UPS, distributed power architectures, and automotive load control.
The typical on-resistance is 14mΩ when the gate-source voltage is 10V and the drain current is 33A.
Yes, the product is qualified to AEC Q101 standards.