FCA16N60N N-Channel MOSFET is a high performance product from Fairchild Semiconductor Corporation. This product uses an advanced deep trench filling process and has ultra-low RDS(on), ultra-low gate charge, low effective output capacitance and other features.
This document is a technical datasheet for the Fairchild Semiconductor FCA16N60N, an N-Channel MOSFET utilizing SupreMOS technology. The device is rated for 600V drain-to-source voltage and 16A continuous current, designed for applications such as AC-DC SMPS, PFC, server/telecom power, and industrial power supplies.
| Drain to Source Voltage (Voss) | 600 V |
|---|---|
| Gate to Source Voltage (Vass) | +30 V |
| Operating and Storage Temperature Range | -55 to +150 °C |