This document describes the features and characteristics of Fairchild Semiconductor Corporation's FCA20N60F 600V N-CHANNEL FRFET product, including 650V operating voltage, low on-resistance, fast recovery type, ultra low gate charge, low effective output capacitance, etc.
This document is a technical datasheet for the Fairchild Semiconductor FCA20N60F, a 600V N-Channel SuperFET MOSFET. The device features a proprietary charge balance mechanism designed for low on-resistance and fast recovery, making it suitable for AC/DC power conversion applications. It is available in the TO-3PN package and is RoHS compliant.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, off and on characteristics, dynamic parameters, and switching specifications. It also includes typical performance characteristics graphs, test circuit diagrams, and mechanical dimensions for the TO-3PN package.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 20 A |
| Typical On-Resistance | 0.150 Ohms |
| Typical Gate Charge | 75 nC |
| Typical Effective Output Capacitance | 165 pF |
| Typical Reverse Recovery Time | 160 ns |
The maximum drain-source voltage is 600 V.
The typical on-resistance is 0.150 Ohms.
Yes, the device is RoHS compliant.