This document describes the features and characteristics of the N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ product manufactured by Fairchild Semiconductor Corporation.
This document is a datasheet for the Fairchild Semiconductor FDB2572, an N-Channel PowerTrench MOSFET rated for 150V and 29A continuous drain current. It provides comprehensive electrical and thermal specifications for the TO-263AB package.
The datasheet details the device's maximum ratings, including a drain-to-source voltage of 150V and a gate-to-source voltage of 420V. It also covers dynamic characteristics such as input capacitance, total gate charge, and switching times, alongside reverse recovery parameters for the body diode. Thermal performance is analyzed through junction-to-case and junction-to-ambient resistance values, with specific guidance on power dissipation based on mounting pad area.
| Drain to Source Voltage | 150 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current (Tj = 25°C) | 29 A |
| Continuous Drain Current (Tj = 100°C) | 20 A |
| Power Dissipation | 135 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 1.441 °C/W |
| Thermal Resistance Junction to Ambient (TO-263) | 62 °C/W |
| Package Type | TO-263AB |
The device is suitable for DC/DC converters, Off-Line UPS, Distributed Power Architectures, VRMs, and as a primary switch for 24V and 48V systems.
The maximum continuous drain current at a junction temperature of 25°C is 29 Amperes.
The thermal resistance decreases as the top copper area increases, calculated using specific equations based on the area in square inches or centimeters.