FCA47N60F 600V N-Channel MOSFET, FRFET is a high performance new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance, suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
This document is a technical datasheet for the Fairchild Semiconductor FCA47N60F, a 600V N-Channel MOSFET utilizing the proprietary SuperFET technology. It highlights features such as ultra-low gate charge, fast recovery time, and high avalanche energy capability, making it suitable for AC/DC power conversion applications.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 47 A |
| Continuous Drain Current (Tc = 100°C) | 29.7 A |
| Pulsed Drain Current | 144 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 1800 mJ |
| Power Dissipation (Tg = 25°C) | 417 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-3PN |
| Total Gate Charge | 210 nC |
The maximum drain-source voltage is 600 V.
The continuous drain current at 25°C is 47 A.
The operating and storage temperature range is -55 to +150 °C.