Industrial

MiniMOS series devices utilize Motorola's High Cell Density HDTMOS process and feature ultra low RDS(on) and true logic level performance.

MiniMOS series are high performance, low on-resistance, high reliability power MOSFET devices.

FDME1024NZT Dual N-Channel PowerTrench® MOSFET is a dual N-channel power MOSFET with 20 V, 3.8 A, 66 mΩ features. It is low power and suitable for mobile applications.

FDME1023PZT Dual P-Channel PowerTrench® MOSFET is a -20 V, -2.6 A, 142 mΩ power switch with low on-state resistance and low power consumption.

FDMC8884 N-Channel Power Trench® MOSFET is a 30V, 15A, 19mΩ power tube. It is manufactured using Fairchild Semiconductor's advanced Power Trench® process, which has been specially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

The FDMC8882 N-Channel Power Trench® MOSFET is a N-channel power MOSFET produced by Fairchild Semiconductor Corporation. It has extremely low on-state resistance and is suitable for power management and load switching applications commonly used in notebook computers and portable battery packs.

FDMC8878 N-Channel Power Trench® MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management applications.

FDMC8854 is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor with a low rDS(on), low profile, and RoHS compliance.

MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

This document describes the features and characteristics of FDMC86520L N-Channel Power Trench® MOSFET, including maximum on-resistance, performance at low and high voltages and currents.

Motorola TMOS Power MOSFET Transistor Device Data

MiniMOS is an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

The FDMC8651 is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor Corporation. It features low resistance and low gate resistance, and is suitable for DC/DC converters, synchronous rectifiers, etc.

FDMC86324 is a N-Channel Power Trench® MOSFET produced by Fairchild Semiconductor Corporation. The rated voltage is 80 V, maximum current is 20 A, and the on-state resistance is 23 mΩ. The features of this device include low profile (1 mm max in Power 33), 100% UIL testing and RoHS compliance.