FDMC8878 N-Channel Power Trench® MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management applications.
The FDMC8878 is a rugged N-Channel MOSFET utilizing Fairchild Semiconductor's advanced Power Trench process. It is specifically optimized for power management applications, particularly DC-DC conversion. The device features a low profile of 0.8mm max in the MLP 3.3x3.3 package and is RoHS compliant.
The document provides comprehensive electrical characteristics, including off-state breakdown voltage, on-state resistance, and switching parameters. It also includes typical performance curves for on-resistance, transfer characteristics, and gate charge, along with safe operating area graphs and thermal response data.
| Drain to Source Voltage | 30 V |
|---|---|
| Drain Current - Continuous (Package limited) | 16.5 A |
| Drain Current - Continuous (Silicon limited) | 38 A |
| Drain Current - Continuous (Note 1a) | 9.6 A |
| Power Dissipation (Ta = 25°C) | 2.1 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 4 °C/W |
| Thermal Resistance, Junction to Ambient | 60 °C/W |
| Drain to Source On Resistance (Typical) | 14.0 mΩ |
| Package Type | MLP 3.3X3.3 |
The maximum continuous drain current is 16.5A when package limited at 25°C.
Yes, the device is RoHS compliant.
The operating and storage junction temperature range is from -55°C to +150°C.