FDMC86324 is a N-Channel Power Trench® MOSFET produced by Fairchild Semiconductor Corporation. The rated voltage is 80 V, maximum current is 20 A, and the on-state resistance is 23 mΩ. The features of this device include low profile (1 mm max in Power 33), 100% UIL testing and RoHS compliance.
This document is a datasheet for the Fairchild Semiconductor FDMC86324, an N-Channel Power Trench MOSFET. The device is designed for DC-DC conversion applications and features a low profile of 1 mm maximum. It utilizes Fairchild Semiconductor's advanced Power Trench process to minimize on-state resistance while maintaining superior switching performance.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, dynamic characteristics, and switching characteristics. It also includes typical performance graphs for on-region characteristics, normalized on-resistance, transfer characteristics, and capacitance versus drain-to-source voltage. Dimensional outline and pad layout information is provided for the Power 33 package.
| Package Type | Power 33 |
|---|
The maximum continuous drain current is 20 A when the temperature is 25 °C.
The maximum power dissipation is 41 W when the temperature is 25 °C.
The operating and storage junction temperature range is from -55 to +150 °C.