MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
This document is a Designer's Data Sheet for the Motorola MMSF5NO2HD, a medium power surface mount MOSFET. The device utilizes Motorola's High Cell Density (HDTMOS) process to provide ultra-low on-resistance and true logic-level performance in an SO-8 package.
The datasheet provides maximum ratings, electrical characteristics for off-state and on-state conditions, dynamic parameters such as capacitance and gate charge, and switching characteristics. It includes typical electrical characteristic curves illustrating drain current, on-resistance variation with temperature, and capacitance versus voltage.
| Drain-to-Source Voltage (Vdss) | 20 Vdc |
|---|---|
| Continuous Drain Current @ Ta = 25°C | 8.2 Adc |
| Operating Temperature Range | -55 to 150 °C |
| Static Drain-to-Source On-Resistance (Typical) | 0.025 Ohm |
| Turn-On Delay Time (Typical) | 30 ns |
The device uses a Miniature SO-8 Surface Mount Package.
Yes, it features true logic level performance and can be driven by logic ICs.
The drain-to-source diode exhibits a very low reverse recovery time, specified as 32 ns typical.