The FDMC8882 N-Channel Power Trench® MOSFET is a N-channel power MOSFET produced by Fairchild Semiconductor Corporation. It has extremely low on-state resistance and is suitable for power management and load switching applications commonly used in notebook computers and portable battery packs.
The FDMC8882 is an N-Channel Power Trench MOSFET produced using Fairchild Semiconductor's advanced Power Trench process. It is designed to minimize on-state resistance and is suitable for power management and load switching applications, such as high-side switches in DC-DC buck converters and notebook battery power management.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 16 A |
| Continuous Drain Current (Silicon limited) | 34 A |
| Power Dissipation (Ta = 25°C) | 2.3 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 6.6 °C/W |
| Thermal Resistance, Junction to Ambient | 53 °C/W |
| Package Type | MLP 3.3x3.3 |
The continuous drain current is 16 A when package limited at 25°C and 34 A when silicon limited at 25°C.
The static drain to source on resistance is 14.3 mΩ at Vgs = 10 V and Id = 10.5 A.
Yes, the termination is Lead-free and RoHS Compliant.