Industrial

This document describes the features and characteristics of Motorola TMOS Power MOSFET Transistor. These devices utilize Motorola's High Cell Density TMOS process and contain monolithic back-to-back zener diodes, providing protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They can withstand high energy in the avalanche and commutation modes, and the drain-to-source diode has a very low reverse recovery time. EZFET devices are designed for low voltage, high speed switching applications with a focus on power efficiency. Typical applications include dc-dc converters, power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

This document describes the maximum ratings, thermal characteristics, and features of the FDMS015N04B N-Channel PowerTrench® MOSFET. The product features low RDS(on) and high efficiency, and utilizes advanced packaging and silicon material combination. It is suitable for applications such as synchronous rectification for server/telecom PSU, battery charger and battery protection circuit, DC motor drives, and uninterruptible power supplies.

FDMQ8403 is a N-channel power MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 100V and a rated current of 6A. Its maximum on-resistance is 110mΩ.

FDMQ8203 is a dual N-channel and dual P-channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It has 100V, 6A, 110mΩ of N-channel and -80V, -6A, 190mΩ of P-channel.

Motorola TMOS Power MOSFET Transistor is a medium power surface mount product that utilizes Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They can withstand high energy in the avalanche and commutation modes, and the drain-to-source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications include dc-dc converters, power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The specified avalanche energy eliminates guesswork in designs with inductive loads and provides an additional safety margin against unexpected voltage transients.

FDML7610S is a dual N-channel power MOSFET from Fairchild Semiconductor Corporation, with a rated working voltage of 30V and a rated current of 30A. The maximum on-resistance is 7.5mΩ.

The FDME910PZT P-Channel PowerTrench® MOSFET is a low RDS(on), low profile MOSFET that is suitable for battery charging or load switching applications.

This document describes the features and characteristics of FDME905PT P-Channel PowerTrench® MOSFET, including maximum on-state resistance, low resistance MOSFET, micro package, and RoHS compliance.

This document describes the features and characteristics of FDME820NZT N-Channel PowerTrench® MOSFET, including maximum on-resistance, low profile, halogen-free and antimony oxide-free, HBM ESD protection level, etc.

This document describes the features and characteristics of FDME510PZT P-Channel PowerTrench® MOSFET, including maximum on-state resistance, low profile, halogen-free and antimony oxide-free, and HBM ESD protection.

MiniMOS devices are high performance power MOSFETs that can be used in low voltage, high frequency applications to realize high efficiency power conversion.

Motorola TMOS Power MOSFET Transistor Device Data introduces the features of MiniMOS series power MOSFETs, including ultra-low RDS(on) and true logic level performance. The products are designed for low voltage, high speed switching applications, capable of withstanding high energy in avalanche and commutation modes, and have very low reverse recovery time of the drain-to-source diode.

This document describes the features and characteristics of FDME1034CZT Complementary PowerTrench® MOSFET, including the maximum on-state resistance of the N-channel and P-channel, low profile design, halogen-free and antimony oxide-free, HBM ESD protection, etc.