Industrial

MMSD4148 is a switching diode in the MMSD series. It features high breakdown voltage, fast switching time, surface mount package and is lead-free and RoHS-compliant.

This document provides information about the absolute maximum ratings and electrical characteristics of the MMSD4148 model product from Fairchild Semiconductor. The product features a compact surface mount package with a power dissipation of 400 milliwatts, high breakdown voltage, and fast switching speed.

This document provides the absolute maximum ratings, electrical characteristics, and thermal characteristics of the MMSD3070 small signal diode from Fairchild Semiconductor Corporation. The diode has a maximum repetitive reverse voltage of 200V and an average rectified forward current of 200mA. Additionally, the document includes parameters such as power dissipation, thermal resistance, breakdown voltage, forward voltage, reverse current, total capacitance, and reverse recovery time of the product.

This document provides information on the maximum ratings, thermal characteristics, and electrical characteristics of the semiconductor component MMSD103T1. The MMSD103T1 is a diode with a continuous reverse voltage of 250V and a peak forward current of 200mA.

NTGS3443T1 is a 2 Amp, 20 Volt P-channel TSOP-6 Power MOSFET featuring ultra low RDS(on), higher efficiency extending battery life and miniature TSOP6 surface mount package.

NTGS3441T1 is a power MOSFET product with ultra-low RDS(on) and higher efficiency, suitable for power management in portable and battery-powered products.

1SMA5926-1SMA5945 is a 1.5 watt surface mount silicon zener diode with a voltage range of 11 to 68 volts.

This document introduces the features and characteristics of 1.5 watt zener diodes, including voltage range, ESD rating, flat handling surface, package design, external dimensions, packaging, etc.

1SMA4741 THRU 1SMA200Z 1.0W 11-200V Surface Mount Silicon Zener Diode

FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM is an N-channel power transistor with extremely low RDS(on), supporting a maximum voltage of 25V and a current of 40A.

FDMC2523P P-Channel QFET® is a P-channel MOSFET produced by Fairchild Semiconductor Corporation. It features low rDS(on), low Crss, fast switching, low gate charge, and improved dv/dt capability. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

FDMC2610 N-Channel UltraFET Trench® MOSFET is a power management MOSFET from Fairchild Semiconductor Corporation with a maximum voltage of 200V, a maximum current of 9.5A, and a maximum resistance of 200mΩ. It has a low profile and is RoHS compliant.

The FDMC2674 N-Channel UltraFET Trench MOSFET is a high efficiency power conversion application device with ultra low leakage, low ESR, low total and Miller gate charge. These devices are ideal for high frequency DC to DC converters.

FDMC3020DC N-Channel Dual CoolTM PowerTrench® MOSFET is a high performance N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It offers the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance, making it ideal for applications such as DC/DC converters, telecom secondary side rectification and high end server/workstation.