FDMC8854 is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor with a low rDS(on), low profile, and RoHS compliance.
This document is a datasheet for the Fairchild Semiconductor FDMC8854, an N-Channel PowerTrench MOSFET designed for power management applications such as DC-DC conversion. The device features a low profile design with a maximum height of 1mm and is RoHS compliant.
| Drain to Source Voltage | 30 V |
|---|---|
| Gate to Source Voltage | ±20 V |
| Continuous Drain Current (Package limited) | 15 A |
| Continuous Drain Current (Silicon limited) | 67 A |
| Power Dissipation (TC = 25°C) | 41 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction to Case | 3 °C/W |
| Thermal Resistance Junction to Ambient | 60 °C/W |
| Max rDS(on) at VGS = 10V, ID = 15A | 5.7 mΩ |
| Max rDS(on) at VGS = 4.5V, ID = 13A | 7.6 mΩ |
The maximum on-resistance is 5.7mΩ at VGS = 10V and ID = 15A.
Yes, the device is RoHS compliant.
It is optimized for power management applications, such as DC-DC conversion.