FDME1023PZT Dual P-Channel PowerTrench® MOSFET is a -20 V, -2.6 A, 142 mΩ power switch with low on-state resistance and low power consumption.
The document describes the Fairchild Semiconductor FDME1023PZT, which features two independent P-Channel MOSFETs with low on-state resistance. It is specifically designed as a single package solution for battery charge switches in cellular handsets and other ultra-portable applications.
Key specifications include a maximum drain-to-source voltage of -20 V and a continuous drain current of -2.6 A at 25°C. The device operates with a typical on-resistance (RDS(on)) of 142 mΩ when the gate-to-source voltage is -4.5 V, enabling efficient switching in linear mode applications.
| Drain to Source Voltage (VDS) | -20 V |
|---|---|
| On-Resistance (RDS(on)) Typ. | 142 mΩ |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | MicroFET 1.6x1.6 Thin |
Yes, the document lists it as RoHS Compliant.
The device supports a maximum continuous drain current of -2.6 A at an ambient temperature of 25 °C.
The maximum power dissipation is 1.4 W when mounted on a 1 in² pad of 2 oz copper at 25 °C.
The device operates and stores within a junction temperature range of -55 to +150 °C.