FDME1024NZT Dual N-Channel PowerTrench® MOSFET is a dual N-channel power MOSFET with 20 V, 3.8 A, 66 mΩ features. It is low power and suitable for mobile applications.
The FDME1024NZT is a dual N-Channel PowerTrench MOSFET designed specifically as a single package solution for dual switching requirements in cellular handsets and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance to minimize conduction losses.
The device is housed in a MicroFET 1.6x1.6 Thin package, which offers exceptional thermal performance for its physical size. It is suitable for both switching and linear mode applications and is RoHS Compliant, being free from halogenated compounds and antimony oxides.
| Package Type | MicroFET 1.6x1.6 Thin |
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The device is designed for baseband switch and load switch applications.
The maximum continuous drain current at a junction temperature of 25°C is 3.8 A.
The device operates and stores within a junction temperature range of -55 to +150 °C.
The maximum power dissipation for single operation at 25°C is 1.4 W when mounted on a specific copper pad.