MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
This document is a Designer's Data Sheet for the Motorola MMSF5N02HD, a MiniMOS single N-channel field effect transistor (FET). The device utilizes Motorola's High Cell Density HDTMOS process and is designed for low voltage, high speed switching applications where power efficiency is important. It features ultra low RDS(on) and true logic level performance, making it suitable for use in DC-DC converters, power management in portable products, and low voltage motor controls.
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drain Current — Continuous @ 25°C | 8.2 A |
| Operating and Storage Temperature Range | -55 to 150 °C |
| RDS(on) @ Vgs=10V, Id=5A | 0.025 Ohm |
| Package Type | SO-8 |
Typical applications include DC-DC converters, power management in portable and battery powered products like computers and phones, and low voltage motor controls.
The maximum continuous drain current at 25°C is 8.2 Amperes.
Yes, it features true logic level performance and can be driven by logic ICs.