Motorola TMOS Power MOSFET Transistor Device Data
This document is a Designer's Data Sheet for the Motorola MMSF4P01HD, a P-Channel MiniMOS™ Field Effect Transistor. The device features an advanced High Cell Density HDTMOS process and is designed as a preferred device for low voltage, high speed switching applications where power efficiency is critical.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a 12V drain-to-source voltage and 4A continuous drain current. It details typical applications in DC-DC converters, portable electronics, and motor controls, along with detailed graphs for on-resistance, transfer characteristics, and switching behavior.
| Drain-to-Source Voltage (Vdss) | 12 Vdc |
|---|---|
| Continuous Drain Current @ Ta = 25°C | 4.0 Adc |
| Static Drain-to-Source On-Resistance (VGS=4.5V, ID=4A) | 0.08 Ohm |
| Total Power Dissipation @ Ta = 25°C | 25 Watts |
| Operating and Storage Temperature Range | -55 to 150 °C |
Typical applications include DC-DC converters, power management in portable and battery powered products like computers and phones, and low voltage motor controls.
The device uses a Miniature SO-8 Surface Mount Package.