This document describes the features and characteristics of FDMC86520L N-Channel Power Trench® MOSFET, including maximum on-resistance, performance at low and high voltages and currents.
The document describes the Fairchild Semiconductor FDMC86520L, an N-Channel Power Trench MOSFET optimized for low gate charge and fast switching speed. It is specifically designed to improve efficiency and minimize switch node ringing in isolated DC/DC applications, serving as a primary switch or synchronous rectifier.
| Drain to Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Package limited) | 22 A |
| Continuous Drain Current (Silicon limited) | 55 A |
| Power Dissipation | 40 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 22 A when the temperature is 25°C.
The maximum power dissipation is 40 W at a junction temperature of 25°C.
The operating and storage junction temperature range is from -55 to +150°C.