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FDMS3664S PowerTrench® Power Stage is a dual N-Channel MOSFET with low inductance packaging, excellent switching performance and energy saving characteristics.
FDMS3622S is a 25V Asymmetric Dual N-Channel MOSFET produced by Fairchild Semiconductor Corporation. This product has low on-resistance, low inductance packaging, optimized layout and RoHS compliance.
FDMS3620S PowerTrench® PowerStage 25V Asymmetric Dual N-Channel MOSFET is a low inductance package MOSFET with enhanced switching performance. It is suitable for computing, communications, power and notebook applications.
The FDMS3615S PowerTrench® Power Stage is a 25V Asymmetric Dual N-Channel MOSFET with low on-resistance. It is suitable for applications such as notebooks and servers.
The FDMS3606AS is a 30V asymmetric dual N-channel MOSFET with low inductance packaging, lower switching losses, and reduced circuit inductance. It is suitable for applications such as computing, communications, general purpose point of load, notebook VCORE, and server MOSFET.
The FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET is a dual N-channel MOSFET device produced by Fairchild Semiconductor Corporation. It has low on-resistance, low packaging inductance, low switching loss and other features.
FDMS3600S is a dual N-channel MOSFET device produced by Fairchild Semiconductor Corporation. It has the characteristics of low switching loss, optimized circuit layout and low switch node ringing. This device can be applied to computing, communications, general purpose point of load, notebook VCORE and server.
This document describes the features and characteristics of the FDMS3572 N-Channel UltraFET Trench® MOSFET, including maximum rDS(on), Miller charge, and optimized efficiency at high frequencies.
FDMS3500 N-Channel Power Trench® MOSFET is a high-performance MOSFET with 75V, 49A, 14.5m� characteristics, suitable for DC-DC conversion applications.
