FDMC8884 N-Channel Power Trench® MOSFET is a 30V, 15A, 19mΩ power tube. It is manufactured using Fairchild Semiconductor's advanced Power Trench® process, which has been specially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
The FDMC8884 is an N-Channel Power Trench MOSFET produced using Fairchild Semiconductor's advanced Power Trench process. It is designed to minimize on-state resistance and is well-suited for power management and load switching applications, such as high-side switches in DC-DC buck converters and notebook battery power management.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 15 A |
| Continuous Drain Current (Silicon limited) | 24 A |
| Power Dissipation | 18 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 6.6 °C/W |
| Static Drain to Source On Resistance | 19 mΩ |
The device supports a continuous drain current of 15 A when limited by the package at Ta = 25°C.
The maximum drain to source voltage rating for this part is 30 V.
The maximum power dissipation is 18 W when the junction temperature is 25°C.