Industrial

This datasheet provides detailed information on the characteristics, specifications, applications of FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM.

FDMS3006SDC is an N-Channel MOSFET produced using Fairchild Semiconductor's advanced Power Trench® process. This device features low rDS(on) and high performance, making it suitable for applications such as synchronous rectifiers, secondary side rectification in communication equipment, and Vcore low side in high-end servers/workstations.

The FDMS2734 N-Channel UltraFET Trench® MOSFET is a MOSFET device from Fairchild Semiconductor Corporation. Its main features are low rDS(on), low ESR, low total and Miller gate charge, making it ideal for high frequency DC to DC converters.

FDMS2672 N-Channel UltraFET Trench MOSFET is a 200V, 20A, 77mΩ MOSFET produced by Fairchild Semiconductor Corporation. This device has low Rds(on), low ESR, low total harmonic distortion and Miller gate charge, and is ideal for high frequency DC/DC conversion applications.

FDMS2572 is an N-Channel UltraFET Trench MOSFET with a maximum rDS(on) of 47mΩ at VGS=10V, ID=4.5A. It also features low Miller charge and optimized efficiency at high frequencies, making it ideal for high frequency DC to DC converters.

This document describes the features and characteristics of FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM, including maximum on-resistance, high performance technology, SyncFET Schottky body diode, etc.

The FDMS2508SDC is a N-Channel MOSFET produced by Fairchild Semiconductor. This device uses an advanced PowerTrench® process and features extremely low rDS(on) and extremely low Junction-to-Ambient thermal resistance, making it ideal for DC/DC converters, telecom secondary side rectification, and high end server/workstation Vcore low side MOSFET applications.

FDMS2506SDC is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device uses dual cooling top side cooling PQFN package and has extremely low RDS(on) and high performance technology. Application scope includes synchronous rectifier for DC/DC converters, telecom secondary side rectification, and high end server/workstation Vcore low side MOSFET.

MMST2222A is a NPN small signal surface mount transistor manufactured by Diodes Inc., with a SOT-323 package, the maximum collector-emitter voltage is 40 V, the maximum collector-base voltage is 75 V, the maximum emitter-base voltage is 6.0 V, the maximum collector current is 600 mA, the maximum power dissipation is 200 mW, the maximum thermal resistance is 625 °C/W, and the operating temperature range is -55 to +150 °C

FDMS2504SDC is an N-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It offers extremely low rDS(on) and excellent switching performance, with the added benefit of an efficient monolithic Schottky body diode.

FDMS039N08B N-Channel PowerTrench® MOSFET is a low RDS(on), low FOM, low reverse recovery charge N-channel MOSFET, suitable for synchronous rectification, battery charger, motor drive and other applications

The FDMS0312S N-Channel PowerTrench® SyncFETTM is a 30 V, 42 A, 4.9 mΩ N-channel power transistor from Fairchild Semiconductor Corporation. This product uses an advanced package and silicon technology combination to offer the lowest rDS(on) while maintaining excellent switching performance. This product also has the added benefit of an efficient monolithic Schottky body diode, MSL1 robust package design, 100% UIL tested, and RoHS compliant.

Motorola TMOS Power MOSFET Transistor Device Data is an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.