The FDME910PZT P-Channel PowerTrench® MOSFET is a low RDS(on), low profile MOSFET that is suitable for battery charging or load switching applications.
The document describes the Fairchild Semiconductor FDME910PZT, a P-Channel PowerTrench MOSFET rated at 24 mΩ. It is specifically designed for applications such as battery charging or load switching in cellular handsets and other ultraportable devices.
Key features include low on-state resistance, Zener diode protection against ESD, and the MicroFET 1.6x1.6 Thin package which offers exceptional thermal performance. The datasheet provides maximum ratings, electrical characteristics, typical performance graphs, and a dimensional outline for the component.
| Drain to Source Voltage | -20 V |
|---|---|
| Power Dissipation | 24 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Ambient | 60 °C/W |
The device supports a continuous drain current of -8 A at Ta = 25°C.
The maximum power dissipation is 24 W when the ambient temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to +150 °C.