This document describes the features and characteristics of FDME820NZT N-Channel PowerTrench® MOSFET, including maximum on-resistance, low profile, halogen-free and antimony oxide-free, HBM ESD protection level, etc.
This document is a technical datasheet for the Fairchild Semiconductor FDME820NZT, an N-Channel PowerTrench MOSFET. The device features a maximum drain current of 9A and operates with a voltage rating up to 20V.
The datasheet provides comprehensive electrical characteristics, including off-state parameters like breakdown voltage and leakage currents, on-state resistance values at various gate voltages, and dynamic switching characteristics such as turn-on delay time. It also details thermal properties, package dimensions, and recommended land patterns for PCB assembly.
| Drain to Source Voltage (VDS) | 20 V |
|---|---|
| Gate to Source Voltage (VGSS) | +12 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | MicroFET 1.6x1.6 Thin |
The device is designed for use in Li-Ion Battery Packs, Baseband Switches, Load Switches, and DC-DC Conversion circuits.
The maximum rated Gate to Source Voltage (VGS) is +12 V.