Industrial

The FDMS7650 N-Channel PowerTrench® MOSFET is a 30 V, 100 A, 0.99 mΩ N-Channel MOSFET from Fairchild Semiconductor Corporation that is optimized for low gate charge and extremely low rDS(on). It is suitable for applications such as DC/DC converters, OringFETs, and synchronous rectifiers.

The FDMS7656AS N-Channel PowerTrench® SyncFET™ is a low-power, high-efficiency MOSFET device with excellent switching performance. This device uses advanced silicon and package technologies to offer the lowest rDS(on) while maintaining excellent switching performance. It can be used in DC/DC converters, notebook Vcore/GPU low side switches, networking PoL low side switches, and telecom secondary side rectification applications.

The FDMS7658AS is a low-on-resistance switching device designed to minimize losses in power conversion applications. It combines advanced silicon and package technologies to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

This document describes the features and characteristics of the FDMS7660 N-Channel PowerTrench® MOSFET, including maximum on-resistance, advanced package and silicon combination, next generation enhanced body diode technology, etc.

The FDMS7660AS N-Channel PowerTrench® SyncFETTM is a low rDS(on) and high efficiency MOSFET suitable for DC/DC converters, notebook Vcore/GPU low side switches, networking point of load low side switches and telecom secondary side rectification.

FDMS7670 N-Channel PowerTrench® MOSFET is a low rDS(on) and high efficiency N-channel MOSFET. It has fast switching speed and body diode reverse recovery performance.

The FDMS7670AS is a low rDS(on) and high efficiency N-channel power switch with MSL1 robust package design and 100% UIL tested. It is RoHS compliant. This device is suitable for synchronous rectifier in DC/DC converters, notebook Vcore/GPU low side switch, networking PoL low side switch and telecom secondary side rectification applications.

The FDMS7672 is an N-Channel PowerTrench MOSFET designed to improve the efficiency and minimize switch node ringing of DC/DC converters. It features a low rDS(on) and high efficiency design with an advanced package and silicon design. The MOSFET is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.

MMSTA63/MMSTA64 is a PNP surface mount darlington transistor, with high current gain, ultra-small surface mount package, ideal for medium power amplification and switching applications.

FDMS7676 N-Channel PowerTrench® MOSFET is a low on-resistance, high efficiency, high switching speed, small package N-channel MOSFET, which is applicable to synchronous or conventional DC/DC converters.

The FDMS7678 N-Channel Power Trench® MOSFET is a low-power, high-performance MOSFET product that is suitable for power management and load switching applications in notebook computers and portable battery packs.

This document describes the features and characteristics of the FDMS7682 N-Channel PowerTrench® MOSFET, including maximum on-resistance, advanced package and silicon combination, next generation enhanced body diode technology, 100% UIL testing, and RoHS compliance.

MMSTA55/MMSTA56 is a surface mount PNP small signal transistor with Epitaxial Planar Die Construction, Complementary NPN Type Available, Medium Power Amplification and Switching, Ultra-Small Surface Mount Package features