FDMQ8203 is a dual N-channel and dual P-channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It has 100V, 6A, 110mΩ of N-channel and -80V, -6A, 190mΩ of P-channel.
The document describes the Fairchild Semiconductor FDMQ8203, part of the GreenBridge™ Series. It is a quad MOSFET solution designed to provide ten-fold improvement in power dissipation over traditional diode bridges. The device integrates dual N-Channel and dual P-Channel PowerTrench® MOSFETs.
| Drain to Source Voltage (N-Channel) | 100 V |
|---|---|
| Drain Current Continuous (Silicon limited) N-Channel | 10 A |
| Drain to Source Voltage (P-Channel) | -80 V |
| Drain Current Continuous (Silicon limited) P-Channel | -10 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction to Ambient (Pad 2 oz copper) | 160 °C/W |
The maximum continuous drain current limited by the package is 6 A.
The device operates and stores between -55 °C and +150 °C.
The thermal resistance is 160 °C/W under those conditions.