Motorola TMOS Power MOSFET Transistor is a medium power surface mount product that utilizes Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They can withstand high energy in the avalanche and commutation modes, and the drain-to-source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications include dc-dc converters, power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The specified avalanche energy eliminates guesswork in designs with inductive loads and provides an additional safety margin against unexpected voltage transients.
This document is a Designer's Data Sheet for the Motorola MMSF7NO3HD, a MiniMOS single N-channel field effect transistor (FET). The device utilizes Motorola's High Cell Density (HDTMOS) process to provide ultra-low on-resistance and true logic-level performance suitable for low-voltage, high-speed switching applications.
Key specifications include a maximum drain-to-source voltage of 30V and a continuous drain current of 8.2A at 25°C. The device is housed in a miniature SO-8 surface mount package and is designed for use in power management circuits, such as DC-DC converters, and for motor controls in portable products.
| Drain-to-Source Voltage | 30 Vdc |
|---|---|
| Continuous Drain Current (25°C) | 8.2 Adc |
| Continuous Drain Current (100°C) | 5.6 Adc |
| Total Power Dissipation (25°C) | 25 Watts |
| Operating Temperature Range | -55 to 150 °C |
| Package Type | SO-8 |
The maximum continuous drain current at 25°C is 8.2 Adc.
The maximum drain-to-source voltage is 30 Vdc.
The typical static drain-source on-resistance is 0.023 Ohms.