This document describes the maximum ratings, thermal characteristics, and features of the FDMS015N04B N-Channel PowerTrench® MOSFET. The product features low RDS(on) and high efficiency, and utilizes advanced packaging and silicon material combination. It is suitable for applications such as synchronous rectification for server/telecom PSU, battery charger and battery protection circuit, DC motor drives, and uninterruptible power supplies.
This document is a technical datasheet for the Fairchild Semiconductor FDMS015N04B, an N-Channel PowerTrench MOSFET. The device features a 40V drain-to-source voltage rating, a continuous drain current of 100A at 25°C, and a typical on-state resistance (RDS(on)) of 1.13mQ. It is designed for applications requiring low on-resistance and high efficiency, such as synchronous rectification in server and telecom power supplies, battery chargers, DC motor drives, and micro solar inverters.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, gate threshold voltage, switching times, and capacitance values. It also details thermal resistance ratings, maximum safe operating areas, and typical performance graphs illustrating on-resistance variation versus drain current and temperature. The document includes package marking information and dimensional outlines for the Power 56 package.
| Drain to Source Voltage (VDS) | 40 V |
|---|---|
| Continuous Drain Current (ID) | 100 A |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.2 coAy |
The device is suitable for synchronous rectification in server and telecom power supplies, battery chargers, DC motor drives, uninterruptible power supplies (UPS), and micro solar inverters.
The maximum pulsed drain current rating is 400 A.