This document describes the features and characteristics of FDME905PT P-Channel PowerTrench® MOSFET, including maximum on-state resistance, low resistance MOSFET, micro package, and RoHS compliance.
This document is a datasheet for the Fairchild Semiconductor FDME905PT, a P-Channel PowerTrench MOSFET designed for battery charging and load switching in cellular handsets and ultraportable applications. The device features a low on-state resistance of 22 mΩ at Vgs = -4.5 V and is available in a MicroFET 1.6x1.6 Thin package.
Yes, the device is RoHS compliant and free from halogenated compounds.
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.
The maximum continuous drain current is 8 A at a temperature of 25 °C.
The maximum power dissipation is 21 W at a temperature of 25 °C.