Fairchild FDME510PZT P-Channel MOSFET Datasheet

This document describes the features and characteristics of FDME510PZT P-Channel PowerTrench® MOSFET, including maximum on-state resistance, low profile, halogen-free and antimony oxide-free, and HBM ESD protection.

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 7
File format: PDF
File size: 249 KB
Published: 11 July, 2012
Updated: 28 September, 2023
MD5 checksum: 01D130E065A481B9DF57356C068A2683
PDF: Fairchild FDME510PZT P-Channel MOSFET Datasheet PDF

About this manual

The document describes the Fairchild Semiconductor FDME510PZT, a P-Channel PowerTrench MOSFET designed for battery charging or load switching in cellular handsets and ultraportable applications. It features a low on-state resistance of 37 mΩ at Vgs = -4.5V and Id = -5A.

What's inside

Features
General Description
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Typical Characteristics
Package Marking and Ordering Information

Specifications

Drain to Source Voltage (Vdss)	-20 V
Gate to Source Voltage (Vgs)	+8 V
On-Resistance (Rds(on))	37 mΩ at Vgs=-4.5V, Id=-5A
Operating Junction Temperature Range	-55 to +150 °C

Frequently asked questions

What applications is this MOSFET designed for?

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

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