Motorola MMSF7N03Z EZFET Power MOSFET Designer's Data Sheet

This document describes the features and characteristics of Motorola TMOS Power MOSFET Transistor. These devices utilize Motorola's High Cell Density TMOS process and contain monolithic back-to-back zener diodes, providing protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They can withstand high energy in the avalanche and commutation modes, and the drain-to-source diode has a very low reverse recovery time. EZFET devices are designed for low voltage, high speed switching applications with a focus on power efficiency. Typical applications include dc-dc converters, power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.


Motorola MMSF7N03Z EZFET Power MOSFET Designer's Data Sheet - cover page
Brand
Motorola
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
195 KB
Published
11 July, 2012
Updated
29 September, 2023
MD5 checksum
67FB35B6D3C34636B5721A4685359979

About this manual

This document is a Designer's Data Sheet for the Motorola MMSF7N03Z, an EZFET device featuring a single N-channel TMOS power MOSFET with a monolithic back-to-back Zener diode for ESD protection. The device is designed for low voltage, high speed switching applications such as DC-DC converters and power management in portable products.

The datasheet provides maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a drain current of 7.5A, a drain-to-source voltage of 30V, and an on-resistance of 0.030 ohms. It details switching characteristics, capacitance, and source-drain diode properties to facilitate circuit design under worst-case conditions.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Typical Electrical Characteristics
  • Power MOSFET Switching
  • Device Marking
  • Ordering Information

Specifications

Drain-to-Source Voltage30 V
On-Resistance0.030 Ohm
Package TypeSO-8
Operating Temperature Range-55 to 150 °C

Frequently asked questions

What are the typical applications for this device?

Typical applications include DC-DC converters and power management in portable and battery powered products such as computers and printers.

What is the maximum continuous drain current at a temperature of 25°C?

The device supports a continuous drain current of 7.5 Amperes when the ambient temperature is 25°C.

What is the maximum total power dissipation at an ambient temperature of 25°C?

The maximum total power dissipation is 25 Watts when the ambient temperature is 25°C.

What are the operating and storage temperature ranges for this MOSFET?

The device operates and stores within a temperature range of -55 to 150 °C.

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