Industrial

This document describes the features and characteristics of FDN86246 N-Channel PowerTrench® MOSFET, including maximum rDS(on) values, high-performance trench technology, high power and current handling capability, etc.

This document describes the features and characteristics of FDP020N06B_F102 N-Channel PowerTrench® MOSFET, including low on-state resistance, low reverse-recovery charge, fast switching speed, etc. It is suitable for applications such as synchronous rectification, battery chargers, DC motor drives, etc.

FDPA025N06 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor, which features extremely low RDS(on), fast switching speed, low gate charge, high power and current handling capability.

The FDP027N08B_F102 is an N-channel MOSFET produced by Fairchild. Its maximum voltage is 80V and its maximum current is 223A. Its typical on-state resistance is 2.21 mOhms.

This product is a N-Channel PowerTrench MOSFET with low on-state resistance, fast switching speed and low gate charge.

This document describes the features and characteristics of FDP032N08 N-Channel PowerTrench® MOSFET, including 75V drain-to-source voltage, 235A drain current, and 3.2mΩ on-state resistance.

FDP036N10A N-Channel PowerTrench® MOSFET is a high performance N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has the features of RDS(on) = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A, and is suitable for DC to DC Convertors / Synchronous Rectification applications.

FDP040N06 is a N-Channel MOSFET produced by Fairchild Semiconductor. Its maximum feature is RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A, with fast switching speed, low gate charge, high performance trench technology and extremely low RDS(on), suitable for DC to DC converters/synchronous rectification applications.

FDP047N08 is an N-Channel PowerTrench MOSFET power field-effect transistor. It features low on-state resistance, fast switching speed, low gate charge, and high-performance trench technology.

The FDP047N10 is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation, which has a low Rdson, a high switching speed, a low gate charge, a high power and current handling capability, and is RoHS compliant.

FDP083N15A_F102 N-Channel PowerTrench® MOSFET is a high performance, low power N-channel MOSFET manufactured by Fairchild Semiconductor. This MOSFET features 8.3mΩ low RDS(on), 6.85mΩ (Typ.)@ VGS = 10V, ID = 75A fast switching speed and low gate charge. It is suitable for DC to DC converters, synchronous rectification for Server/Telecom PSU, battery charger, AC motor drives and Uninterruptible Power Supplies (UPS).

FDP085N10A_F102 is a high-performance N-channel MOSFET with RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A, fast switching speed and low gate charge, supporting DC to DC converters and synchronous rectification for telecom power applications.

This document introduces the FDP090N10 N-Channel PowerTrench® MOSFET product released in January 2008. The product features a voltage of 100V, a current of 75A, and an RDS(on) of 9mΩ. It uses high-performance trench technology, with fast switching speed, low gate charge, and high power handling capability. It is suitable for applications such as DC-to-DC converters and synchronous rectification.