This data sheet is for APT1001R1AVR's characteristic parameters, including rated voltage, rated current, switching time, switching frequency, etc.
This document is a datasheet for the Advanced APT1001R1AVR, a high voltage N-Channel enhancement mode power MOSFET. The device features 1000V drain-source voltage rating and 9A continuous drain current, utilizing Advanced Power Technology's Power MOS V® technology to minimize the JFET effect and reduce on-resistance.
| Total Power Dissipation | 200 Watts |
|---|---|
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | TO-3 |
The total power dissipation is 200 watts at a temperature of 25°C.
The device operates and stores within a junction temperature range of -55 to 150 C.