APT1001R1BN and APT1001R3BN are N-channel enhancement MOSFETs with a rated drain-source voltage of 1000V, continuous drain current of 10.5A and 10.0A, and drain-source resistance of 1.10Ω and 1.30Ω.
This document provides technical specifications for the APT1001R1BN and APT1001R3BN models, which are N-Channel Enhancement Mode High Voltage Power MOSFETs. The datasheet details maximum ratings such as drain-source voltage up to 1000V and continuous drain currents of 10.5A or 10A depending on the model.
The document includes comprehensive static electrical characteristics, dynamic parameters like gate charge and capacitance, thermal data, and safe operating area graphs. It also features typical output characteristics curves and a mechanical outline for the TO-247AD package.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current @ Tg = 25°C (APT1001R1BN) | 10.5 Amps |
| Continuous Drain Current @ Tg = 25°C (APT1001R3BN) | 10 Amps |
| Gate-Source Voltage (Max) | +30 Volts |
| Total Power Dissipation @ T, = 25°C | 310 Watts |
| Operating and Storage Junction Temperature Range | -55 to 150 °C |
The maximum drain-source voltage (Vogs_) is 1000 Volts for both models.
The document includes an outline drawing for the TO-247AD Package.