This document is the datasheet of APT1001R1BVFR
This document is a technical datasheet for the APT1001R1BVFR, a new generation of high voltage N-Channel enhancement mode power MOSFETs. The device features 1000V drain-source voltage capability and an 11A continuous drain current rating.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 11 Amps |
| Pulsed Drain Current | 44 A |
| Total Power Dissipation | 280 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | TO-247 |
The maximum continuous drain current is 11 Amps when the temperature is 25°C.
The device can dissipate a maximum of 280 Watts at a temperature of 25°C.
The operating and storage junction temperature range is from -55 to 150 C.