This is the datasheet of FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET from Fairchild Semiconductor Corporation. It features 600 mA, 20 V RDS(ON) = 700 m��@ VGS = 4.5 V RDS(ON) = 850 m� @ VGS = 2.5 V, ESD protection diode and RoHS compliance.
This document is a datasheet for the Fairchild Semiconductor FDY3000NZ, a Dual N-Channel MOSFET designed using the PowerTrench process. It is specified for a 2.5V gate drive voltage and features a 20V drain-source breakdown voltage. The device is suitable for applications such as ESD protection and Li-Ion battery pack management and is RoHS compliant.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, on-resistance, gate threshold voltage, and switching parameters. It also includes typical performance curves for on-resistance, transfer characteristics, and capacitance, along with a maximum safe operating area and transient thermal response data.
Yes, the FDY3000NZ is RoHS compliant.
The operating and storage junction temperature range is -55 to +150 °C.