This document describes the features and characteristics of the FDY301NZ single-channel MOSFET. It is designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. Its applications include Li-Ion battery packs. The main features include a current of 200mA, 20V and a resistance of 5Ω @ VGS = 4.5V, 7Ω @ VGS = 2.5V. In addition, it also has an ESD protection diode and is RoHS compliant.
This document is a technical datasheet for the Fairchild Semiconductor FDY301NZ, a Single N-Channel MOSFET designed using the advanced PowerTrench process. The device is optimized for a rated voltage of 2.5V and includes an integrated ESD protection diode between the gate and source.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltages, on-resistance values at various currents and temperatures, switching times, and capacitance data. It also details thermal resistance specifications for different mounting conditions and outlines the physical package dimensions conforming to EIAJ SC89 standards.
| Drain-Source Voltage (Voss) | 20 V |
|---|---|
| Gate-Source Voltage (Vass) | +12 V |
| Operating Junction Temperature Range | -55 to +150 °C |
Yes, it features an integrated ESD protection diode connected between the gate and source.