The document describes an N-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOS™ technology and packaged in a plastic package. The product features logic level threshold compatibility, very fast switching, and is suitable for applications such as logic level translators and high-speed line drivers.
This document describes the Philips 2N7002E, an N-channel TrenchMOS™ FET designed for logic level translator and high speed line driver applications. The device features very fast switching speeds and is available in a surface-mounted TO-236AB plastic package (SOT23) with three leads.
The datasheet provides comprehensive technical specifications including limiting values, thermal characteristics, static and dynamic electrical parameters, and typical performance curves for drain current, resistance, capacitance, and timing. It also includes ordering information, pin definitions, and a detailed package outline.
| Package type | SOT23 (TO-236AB) |
|---|
The device is suitable for use as a logic level translator and a high speed line driver.
Yes, it features a logic level threshold voltage compatible design.