The FDY300NZ is a N-channel MOSFET from Fairchild Semiconductor that features a very low RDS(ON) @ VGS = 2.5v and is suitable for use in Li-Ion battery packs and other applications.
This document is a technical datasheet for the Fairchild Semiconductor FDY300NZ, a Single N-Channel MOSFET utilizing the advanced PowerTrench process. The device is designed to optimize on-resistance and includes an integrated ESD protection diode between the gate and source.
Key specifications include a drain-source voltage rating of 20V and a continuous drain current of 600 mA. The datasheet provides detailed electrical characteristics, such as input/output capacitance values, switching times, and thermal resistance data for various mounting conditions.
| Drain-Source Voltage (V_DSS) | 20 V |
|---|---|
| Gate-Source Voltage (V_GSS) | +12 V |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is designed to operate with a specified gate-source voltage of 2.5V.
Yes, the device includes a diode connected between the gate and source that serves as protection against ESD.
Yes, the datasheet lists RoHS Compliant under the features section.