2N7002F is an N-channel enhancement mode field-effect transistor that uses TrenchMOS™ technology. It is designed for medium-speed switching applications. The transistor features TrenchMOS™ technology, which provides very fast switching, logic level compatibility, and a subminiature surface mount package.
This document is a product data sheet for the 2N7002F, an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. It is available in a subminiature surface mount SOT23 package designed for logic level compatibility and very fast switching applications.
| Junction temperature | -150 °C |
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The device is available in a SOT23 plastic surface mounted package with 3 leads.
It is suitable for relay drivers, high speed line drivers, and logic level translators.