Industrial

2N7007 is a N-channel enhancement-mode vertical DMOS FET produced by Supertex, which features high input impedance, low input capacitance and fast switching speeds. It is suitable for a wide range of switching and amplifying applications.

2N7002W is an N-channel enhancement mode field-effect transistor featuring low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and ultra-small surface mount package.

This document describes the features of the 2N7002W N-Channel Enhancement Mode Field Effect Transistor, including low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, etc.

This document describes the features and characteristics of the FQA28N15 N-Channel MOSFET product. The product is produced using Fairchild's proprietary DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, DC motor control, and uninterrupted power supply.

The document describes the features and characteristics of QFET products.

This document describes the features and characteristics of the FQA24N60 600V N-Channel MOSFET product produced by Fairchild Semiconductor International, including low on-state resistance, superior switching performance, and high energy pulse withstand capability. These products are well suited for high efficiency switch mode power supplies.

This document is the datasheet of 6A05 - 6A10 6.0A Silicon Rectifier.

The 2N7002V/VA is a dual N-channel enhancement mode field effect transistor with low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, ultra-small surface mount package and lead free by design/RoHS compliant features.

The FQA19N60 is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which features ultra-low on-state resistance, superior switching performance, and high-energy pulse handling capability. It is well suited for high efficiency switch mode power supplies.

2N7002V/VA is a dual N-channel enhancement mode field effect transistor with low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and ultra-small surface mount package

2N7002T is a N-channel enhancement mode field effect transistor with low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and ultra-small surface mount package.

The CS5012A/14/16 are 12-, 14-, and 16-bit monolithic analog to digital converters with conversion times of 7.2 µs, 14.25 µs, and 16.25 µs. Unique self-calibration circuitry ensures excellent linearity and differential nonlinearity, with no missing codes. Offset and full-scale errors are kept within 1/2 LSB (CS5012A/14) and 1 LSB (CS5016), eliminating the need for calibration. Unipolar and bipolar input ranges are digitally selectable. The pin compatible CS5012A/14/16 consist of a DAC, conversion and calibration microcontroller, oscillator, comparator, microprocessor-compatible 3-state I/O, and calibration circuitry. The input track-and-hold, inherent to the devices’ sampling architecture, acquires the input signal after each conversion using a fast-slewing, on-chip buffer amplifier. This allows throughput rates up to 100 kSps(CS5012A), 56 kSps (CS5014), and 50 kSps (CS5016).

This file is about FQA170N06's datasheet. This product is a N-Channel enhancement mode power field effect transistors. It has low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating.